Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅢ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.5 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

文件：221.59 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (m

文件：222.74 Kbytes 页数：5 Pages

TOSHIBA

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Surface Mount TRANSZORB® Transient Voltage Suppressors

文件：91.78 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Available in bidirectional polarity only • 3000 W peak pulse power capability with a (10/1000 μs) waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende

文件：102.78 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66

文件：213.95 Kbytes 页数：5 Pages

TOSHIBA

东芝