丝印：KR1；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

1. Applications • Relay Drivers 2. Features (1) AEC-Q101 Qualified (Note1). (2) 3.0-V gate drive voltage. (3) Built-in Internal Zener diodes and resistors. Note 1: For detail information, please contact to our sales.

文件：451.77 Kbytes 页数：9 Pages

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丝印：KR1；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

文件：455.73 Kbytes 页数：9 Pages

TOSHIBA

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MOSFETs Silicon N-Channel MOS

1. Applications • Relay Drivers 2. Features (1) AEC-Q101 Qualified (Note1). (2) 3.0-V gate drive voltage. (3) Built-in Internal Zener diodes and resistors. Note 1: For detail information, please contact to our sales.

文件：451.77 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Feature：Relay Drivers\nPolarity：N-ch\nGeneration：π-MOSⅤ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.65 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-12 V ;

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