SSM3K76MFV数据表ic资料批发采购东芝-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SSM3K76MFV	文件：263.88 Kbytes Page：8 Pages	丝印：S5；Package：VESM；MOSFETs Silicon N-Channel MOS Applications • High-Speed Switching • Analog Switches Features (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) 文件：263.88 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K76MFV	文件：300 bytes Page：1 Pages	Small Low ON resistance MOSFETs	Toshiba 东芝	Toshiba
SSM3K76CT	文件：320.85 Kbytes Page：9 Pages	MOSFETs Silicon N-Channel MOS Applications • High-Speed Switching Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) (3) Low leakage current 文件：320.85 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K76FS	文件：264.46 Kbytes Page：8 Pages	MOSFETs Silicon N-Channel MOS Applications • High-Speed Switching Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) (3) Low leakage current 文件：264.46 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA

更多SSM3K76MFV供应商更新时间2026-1-28 16:00:00