丝印：S3；Package：SSM；MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching • Analog Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@V

文件：253.86 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small-signal MOSFET

Toshiba

东芝

MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching • Analog Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@V

文件：287.11 Kbytes 页数：9 Pages

TOSHIBA

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Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Available in bidirectional polarity only • 3000 W peak pulse power capability with a (10/1000 μs) waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende

文件：102.78 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Surface Mount TRANSZORB® Transient Voltage Suppressors

文件：91.78 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching • Analog Switches Features (1) 1.2-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6

文件：284.56 Kbytes 页数：9 Pages

TOSHIBA

东芝