SSM3K78CTC规格书供应商报价东芝TOSHIBA-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SSM3K78CTC	文件：284.56 Kbytes Page：9 Pages	丝印：K；Package：CST3C；MOSFETs Silicon N-Channel MOS Applications • High-Speed Switching • Analog Switches Features (1) 1.2-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 文件：284.56 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K78CTC	文件：300 bytes Page：1 Pages	Small-signal MOSFET	Toshiba 东芝	Toshiba
SSM3K78FS	文件：253.86 Kbytes Page：9 Pages	MOSFETs Silicon N-Channel MOS Applications • High-Speed Switching • Analog Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@V 文件：253.86 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K78MFV	文件：287.11 Kbytes Page：9 Pages	MOSFETs Silicon N-Channel MOS Applications • High-Speed Switching • Analog Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@V 文件：287.11 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA

更多SSM3K78CTC供应商更新时间2026-1-29 16:01:00