DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：142.02 Kbytes 页数：4 Pages

SST

Silicon Storage Technology, Inc

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：147.72 Kbytes 页数：4 Pages

SSC

Silicon Standard Corp.

Si NPN Transistor

□ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz □ Applications - VHF and UHF l

文件：259.839 Kbytes 页数：6 Pages

AUK

Si NPN Transistor

□ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz □ Applications - VHF and UHF l

文件：259.839 Kbytes 页数：6 Pages

AUK

Si NPN Transistor

□ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz □ Applications - VHF and UHF l

文件：259.839 Kbytes 页数：6 Pages

AUK