Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

DC-DC Converter

文件：268.14 Kbytes 页数：10 Pages

TOSHIBA

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Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode

文件：313.41 Kbytes 页数：10 Pages

TOSHIBA

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Multi-chip discrete device (P-ch + SBD)

Generation：U-MOSⅢ\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID -1.5 A \nQ2 Average Forward Current IO 500 mA \nDrain-Source voltage (Q1) VDSS -12 V \nQ2 Reverse Voltage VR 12 V ;

Toshiba

东芝