SSM3K79CTC数据表ic资料供应价格东芝-114ic电子网

首页 >SSM3K79CTC>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
SSM3K79CTC	文件：264.88 Kbytes Page：8 Pages	丝印：N；Package：CST3C；MOSFETs Silicon N-Channel MOS Applications • Load Switches Features (1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) (3) Low leakage current 文件：264.88 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K79FS	文件：381.34 Kbytes Page：8 Pages	MOSFETs Silicon N-Channel MOS Applications • Load Switches Features (1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) (3) Low leakage current 文件：381.34 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K79FU	文件：386.65 Kbytes Page：8 Pages	MOSFETs Silicon N-Channel MOS Applications • Load Switches Features (1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) (3) Low leakage current 文件：386.65 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
SSM3K79MFV	文件：383.77 Kbytes Page：8 Pages	MOSFETs Silicon N-Channel MOS Applications • Load Switches Features (1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) (3) Low leakage current 文件：383.77 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA

更多SSM3K79CTC供应商更新时间2025-10-5 16:01:00