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02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:    -Motorcontrols    -Inverter    -SMPS •NPT-Technologyoffers:    -verytightparameterdistributi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXTP02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTP02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTY02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTY02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SGB02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGB02N120

FastIGBTinNPT-technologyLowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N120

FastIGBTinNPT-technology

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.6V@IC=2A ·HighCurrentCapability ·HighInputImpedance ·Lowthermalresistance APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SGI02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGI02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGP02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGP02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGP02N120

IGBT

DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·Motorcontrols ·Inverter ·SMPS

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SGW02N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGW02N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. •lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforfrequencyinvertersforwashingmachi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:    -Motorcontrols    -Inverter    -SMPS •NPT-Technologyoffers:    -verytightparameterdistributi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode Allowednumberofshortcircuits:1s. •lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10s •Designedforfrequencyinvertersfor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
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INFINEO
2020+
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80000
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INFINEON
22+
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28600
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INFINEON
21+
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50000
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INFINEON
1932+
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598
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INFINEON
2022+
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57550
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TI
24+
CDIP-14
11950
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INFINEON
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699839
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INFINEON/英飞凌
22+
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86901
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INFINEON/英飞凌
22+
TO-220
86901
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更多SGP02N120(M4772R)供应商 更新时间2024-6-22 16:00:00