Single N-Channel Logic Level PowerTrencha MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

文件：281.88 Kbytes 页数：3 Pages

Fairchild

仙童半导体

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor

文件：254.01 Kbytes 页数：12 Pages

PHI

飞利浦

N-Channel, 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested

文件：92.54 Kbytes 页数：1 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

文件：113.81 Kbytes 页数：8 Pages

IRF

HEXFET

Power MOSFET

Description This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO

文件：119.92 Kbytes 页数：8 Pages

IRF

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08611 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Simple Drive Requirements

文件：119.92 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

文件：119.92 Kbytes 页数：8 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低开关耗能\n• 低通态损耗;

Infineon

英飞凌

Power MOSFETs

Nexperia

安世