Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:     - Motor controls     - Inverter     - SMPS • NPT-Technology offers:     - very tight parameter distributi

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INFINEON

英飞凌

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 0.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes 页数：4 Pages

IXYS

艾赛斯