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02N60S5

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

02N60S5

Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

02N60S5

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

02N60S5_V01

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

02N60S5_V02

Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

ISPD02N60S5

N-ChannelMOSFETTransistor

•DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ISPP02N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SPB02N60S5

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SPB02N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPB02N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPB02N60S5

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPD02N60S5

PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SPD02N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPD02N60S5

N-ChannelMOSFETTransistor

•DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SPN02N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPN02N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP02N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP02N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SPP02N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SPP02N60S5

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
供应商型号品牌批号封装库存备注价格
INFINEON
2020+
TO252
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINE0N
18+
TO252
999999
进口全新原装现货
询价
infineon
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
23+
N/A
45980
正品授权货源可靠
询价
infineon
18+
TO-252
41200
原装正品,现货特价
询价
infineon
2023+
P-TO252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
infineon
2020+
P-TO252
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
INFINEON/英飞凌
23+
TO-252
10000
公司只做原装正品
询价
INFINEON/英飞凌
23+
TO-220
50000
全新原装正品现货,支持订货
询价
17
22+
TO-251
1503
原装现货假一赔十
询价
更多02N60S5供应商 更新时间2024-4-25 17:54:00