isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 0.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo

文件：315.81 Kbytes 页数：2 Pages

ISC

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N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes 页数：4 Pages

IXYS

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N通道标准MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.2A@ TC=25℃ ·Drain Source Voltage -VDSS=1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =75Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.87 Kbytes 页数：2 Pages

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Fast IGBT in NPT-technology Lower Eoff compared to previous generation

文件：439.41 Kbytes 页数：11 Pages

INFINEON

英飞凌