Ultra Low On-Resistance

VDSS = -30V RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i

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IRF

P -Channel E nhancement Mode MOS F E T

文件：481.73 Kbytes 页数：7 Pages

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P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：745.67 Kbytes 页数：8 Pages

SAMHOP

三合微科

Pigtailed PD for analog application

文件：250.67 Kbytes 页数：4 Pages

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