10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：272.14 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

ONSEMI

安森美半导体

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：272.14 Kbytes 页数：12 Pages

HARRIS

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：272.14 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：133.99 Kbytes 页数：8 Pages

Intersil

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：272.14 Kbytes 页数：12 Pages

HARRIS

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：133.99 Kbytes 页数：8 Pages

Intersil

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：272.14 Kbytes 页数：12 Pages

HARRIS

P-Channel 60-V (D-S) MOSFET

文件：955.52 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFETThese products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were d • 10A, 30V\n• rDS(ON)= 0.200Ω\n• Temperature Compensating PSPICE® Model\n• PSPICE Thermal Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175oC Operating Temperature;

ONSEMI

安森美半导体