| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RFD10P03 | 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | Intersil Intersil Corporation | Intersil | ||
10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | HARRIS Harris Corporation | HARRIS | ||
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | Intersil Intersil Corporation | Intersil | ||
10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | HARRIS Harris Corporation | HARRIS | ||
10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | HARRIS Harris Corporation | HARRIS | ||
P-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | Intersil Intersil Corporation | Intersil | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
RFD10P03
- 功能描述：
MOSFET TO-251 P-Ch Power
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
HARRIS |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
询价 | ||
INTERSIL/FSC |
23+ |
TO-251 |
28610 |
询价 | |||
24+ |
N/A |
5000 |
公司存货 |
询价 | |||
INTERSIL |
23+ |
TO-252 |
9500 |
专业优势供应 |
询价 | ||
哈里斯 |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
询价 | ||
HAR |
23+ |
NA |
299 |
专做原装正品,假一罚百! |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
1492 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
询价 |
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