10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

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10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET

Description\nThese products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as\nsw • 10A, 30V\n• rDS(ON)= 0.200Ω\n• Temperature CompensatingPSPICE Model\n• PSPICE Thermal Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• 175oC Operating Temperature;

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Fairchild
TO-252

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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仙童
TO-252

仙童

上传：深圳市卓越微芯电子有限公司

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HARRISCORPORATION

上传：深圳市天卓伟业电子有限公司