RFD10P03LSM9A中文资料HARRIS数据手册PDF规格书

描述 Description

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

特性 Features

• 10A, 30V

• rDS(ON)= 0.200Ω

• Temperature CompensatingPSPICE Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature