RFD10P03LSM中文资料INTERSIL数据手册PDF规格书

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

特性 Features

• 10A, 30V

• rDS(ON)= 0.200Ω

• Temperature Compensating PSPICE® Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature