RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

RFD14N05LSM

isc N-Channel MOSFET Transistor

FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

RFD14N05LSM

Marking：14N05L；Package：TO-252；60V N-Channel MOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

RFD14N05LSM

N-Channel 60 V (D-S) MOSFET

RFD14N05LSM9A

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

RFD14N05LSM9A

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON)

RFD14N05LSM9A

N-Channel 60 V (D-S) MOSFET