RFD14N05LSM9A中文资料仙童半导体数据手册PDF规格书

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

特性 Features

• 14A, 50V

• rDS(ON) = 0.100Ω

• Temperature Compensating PSPICE® Model

• Can be Driven Directly from CMOS, NMOS, and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”