14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：214.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175 o C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface

文件：1.03164 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：635.51 Kbytes 页数：5 Pages

Bychip

百域芯

N-Channel 60 V (D-S) MOSFET

文件：1.0045 Mbytes 页数：8 Pages

VBSEMI

微碧半导体