RFD12N06RLESM中文资料INTERSIL数据手册PDF规格书

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

特性 Features

• 12A, 60V

• rDS(ON) = 0.135Ω

• Electrostatic Discharge Protected

• UIS Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drive

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”