16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：130.419 Kbytes 页数：7 Pages

Fairchild

仙童半导体

16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：107.16 Kbytes 页数：8 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.9 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power MOSFET

Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0664 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：667.81 Kbytes 页数：5 Pages

MCC