16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

文件：414.29 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

文件：91.41 Kbytes 页数：8 Pages

Intersil

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：763.27 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel 6 0-V (D-S) MOSFET

文件：897.27 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

文件：226.37 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：905.07 Kbytes 页数：4 Pages

Bychip

百域芯

N 沟道，功率 MOSFET，50V，16A，47mΩ

RFD16N05和RFD16N05SM N沟道MOSFET是利用MegaFET工艺制造而成的。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件设计用于开关稳压器、开关转换器、电机驱动和继电器驱动器等应用。 此类晶体管可以直接通过集成电路运行。 以前的开发类型为TA09771。 •16A, 50V\n•rDS(ON)= 0.047Ω\n•温度补偿式PSPICE模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•175°C工作温度\n•相关文献;

ONSEMI

安森美半导体