16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件：342.79 Kbytes 页数：7 Pages

Intersil

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件：193.57 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件：342.79 Kbytes 页数：7 Pages

Intersil

N-Channel 6 0-V (D-S) MOSFET

文件：897.91 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N 沟道逻辑电平功率 MOSFET 60V，16A，47mΩ

这些N沟道功率MOSFET采用现代工艺生产。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件是为开关稳压器、开关转换器、电机驱动器、继电器驱动器和双极晶体管发射极开关等应用而设计的。 这种性能通过一个特殊的栅极氧化设计来实现，在3V到5V的栅极偏压范围内可提供完整的额定电导，从而可以通过逻辑电平(5V)集成电路直接进行真正的开关电源控制。 以前的开发类型为TA49027。 •16A，60V\n•rDS(ON)= 0.047Ω\n•温度补偿式PSPICE模型\n•可直接通过CMOS、NMOS和TTL电路来驱动\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•相关文献;

ONSEMI

安森美半导体