RFD16N06LESM中文资料仙童半导体数据手册PDF规格书

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

• 16A, 60V

• rDS(ON) = 0.047Ω

• Temperature Compensating PSPICE® Model

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”