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RFD16N05LSM9A

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件:609.98 Kbytes 页数:7 Pages

Fairchild

仙童半导体

RFD16N05LSM9A

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

文件:395.55 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

RFD16N05LSM9A

丝印:16N05L;Package:TO-252;60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件:491.7 Kbytes 页数:6 Pages

UMW

友台半导体

RFD16N05LSM9A

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 30A RDS(ON)

文件:911.54 Kbytes 页数:4 Pages

Bychip

百域芯

RFD16N05LSM9A

N-Channel 6 0-V (D-S) MOSFET

文件:896.98 Kbytes 页数:6 Pages

VBSEMI

微碧半导体

详细参数

  • 型号:

    RFD16N05LSM9A

  • 功能描述:

    MOSFET Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
19+
TO-252
18500
询价
FAIRCHILD/仙童
25+
TO252
20300
FAIRCHILD/仙童原装特价RFD16N05LSM9A即刻询购立享优惠#长期有货
询价
FAIRCHILD/仙童
2025+
5000
原装进口,免费送样品!
询价
onsemi(安森美)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
NK/南科功率
2025+
TO-252
2500
国产南科平替供应大量
询价
FAI
24+
2500
询价
ONSemiconductor
24+
NA
3128
进口原装正品优势供应
询价
FAIRCHILDSEM
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
FAIRCHILD
25+23+
TO252
33297
绝对原装正品全新进口深圳现货
询价
FAIRCHIL
24+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
更多RFD16N05LSM9A供应商 更新时间2025-11-30 16:04:00