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RFD16N05LSM9A

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM9A

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFD16N05LSM9A

Marking:16N05L;Package:TO-252;60V N-Channel MOSFET

Features VDS(V)=60V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

RFD16N05LSM9A

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD16N05LSM9A

N-Channel 6 0-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    RFD16N05LSM9A

  • 功能描述:

    MOSFET Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
19+
TO-252
18500
询价
FAIRCHILD/仙童
24+
TO252
8950
BOM配单专家,发货快,价格低
询价
FAIRCHILD/仙童
25+
TO252
20300
FAIRCHILD/仙童原装特价RFD16N05LSM9A即刻询购立享优惠#长期有货
询价
onsemi(安森美)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
NK/南科功率
2025+
TO-252
2500
国产南科平替供应大量
询价
FAI
24+
2500
询价
ONSemiconductor
24+
NA
3128
进口原装正品优势供应
询价
FAIRCHILDSEM
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
FAIRCHILD
25+23+
TO252
33297
绝对原装正品全新进口深圳现货
询价
更多RFD16N05LSM9A供应商 更新时间2025-7-24 16:04:00