N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：635.43 Kbytes 页数：5 Pages

Bychip

百域芯

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：157.91 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：220.35 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：220.35 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：157.91 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：780.12 Kbytes 页数：5 Pages

Bychip

百域芯

MOSFET N-CH 50V 14A TO-252AA

ONSEMI

安森美半导体

N 沟道，功率 MOSFET，50V，14A，100mΩ

这些N沟道功率MOSFET采用MegaFET工艺生产。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件设计用于开关稳压器、开关转换器、电机驱动和继电器驱动器等应用。 此类晶体管可以直接通过集成电路运行。 以前的开发类型为TA09770。 •14A, 50V\n•rDS(ON)= 0.100Ω\n•温度补偿式PSPICE®模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•175°C工作温度\n•相关文献;

ONSEMI

安森美半导体