15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.45 Kbytes 页数：8 Pages

Intersil

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15 A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION · Switching regulators, Switching converters, Motordrivers, and Relay drivers

文件：299.02 Kbytes 页数：2 Pages

ISC

无锡固电

15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.45 Kbytes 页数：8 Pages

Intersil

60V P-Channel MOSFET

文件：798.5 Kbytes 页数：6 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SIPMOS Small-Signal-Transistor

文件：112.96 Kbytes 页数：8 Pages

Infineon

英飞凌