| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RFD16N05 | 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application 文件:414.29 Kbytes 页数:8 Pages | Fairchild 仙童半导体 | Fairchild | |
RFD16N05 | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri 文件:47.83 Kbytes 页数:6 Pages | Intersil | Intersil | |
RFD16N05 | 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application 文件:91.41 Kbytes 页数:8 Pages | Intersil | Intersil | |
RFD16N05 | 丝印:16N05L;Package:TO-252;60V N-Channel MOSFET Features VDS (V) =60V RDS(ON) 文件:491.7 Kbytes 页数:6 Pages | UMW 友台半导体 | UMW | |
RFD16N05 | 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件:226.37 Kbytes 页数:8 Pages | Fairchild 仙童半导体 | Fairchild | |
RFD16N05 | 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs | Renesas 瑞萨 | Renesas | |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri 文件:47.83 Kbytes 页数:6 Pages | Intersil | Intersil | ||
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri 文件:158.72 Kbytes 页数:7 Pages | Fairchild 仙童半导体 | Fairchild | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:308.81 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:298.85 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- Pb-free:
Pb
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
50
- VGS Max (V):
±10
- VGS(th) Max (V):
2
- ID Max (A):
16
- PD Max (W):
60
- RDS(on) Max @ VGS = 4.5 V(mΩ):
50
- Qg Typ @ VGS = 10 V (nC):
43
- Package Type:
DPAK-3/TO-252-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
仙童 |
06+ |
TO-251 |
5000 |
原装 |
询价 | ||
FAI |
24+ |
4800 |
询价 | ||||
HAR |
25+ |
TO-126 |
660 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
哈里斯 |
24+ |
TO252 |
5000 |
全现原装公司现货 |
询价 | ||
INFIEON |
25+ |
2987 |
绝对全新原装现货供应! |
询价 | |||
FSC |
23+ |
TO-251 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
25+23+ |
46669 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||||
FSC/ON |
23+ |
原包装原封 □□ |
15804 |
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存 |
询价 | ||
INTERSIL |
23+ |
65480 |
询价 | ||||
FSC |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 |
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