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RFD16N05

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

文件:414.29 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件:47.83 Kbytes 页数:6 Pages

Intersil

RFD16N05

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

文件:91.41 Kbytes 页数:8 Pages

Intersil

RFD16N05

丝印:16N05L;Package:TO-252;60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件:491.7 Kbytes 页数:6 Pages

UMW

友台半导体

RFD16N05

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

文件:226.37 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

Renesas

瑞萨

RFD16N05L

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件:47.83 Kbytes 页数:6 Pages

Intersil

RFD16N05L

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件:158.72 Kbytes 页数:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件:158.72 Kbytes 页数:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件:47.83 Kbytes 页数:6 Pages

Intersil

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    50

  • VGS Max (V):

    ±10

  • VGS(th) Max (V):

    2

  • ID Max (A):

    16

  • PD Max (W):

    60

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    50

  • Qg Typ @ VGS = 10 V (nC):

    43

  • Package Type:

    DPAK-3/TO-252-3

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
仙童
06+
TO-251
5000
原装
询价
FAI
24+
4800
询价
HAR
25+
TO-126
660
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
哈里斯
24+
TO252
5000
全现原装公司现货
询价
INFIEON
25+
2987
绝对全新原装现货供应!
询价
FSC
23+
TO-251
10000
专做原装正品,假一罚百!
询价
25+23+
46669
绝对原装正品现货,全新深圳原装进口现货
询价
FSC/ON
23+
原包装原封 □□
15804
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
询价
INTERSIL
23+
65480
询价
更多RFD16N05供应商 更新时间2025-10-7 17:06:00