RFD16N05中文资料INTERSIL数据手册PDF规格书

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Features

• 16A, 50V

• rDS(ON) = 0.047Ω

• Temperature Compensating PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175°C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”