RFD16N02LSM中文资料Intersil数据手册PDF规格书

描述 Description

The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

特性 Features

• 16A, 20V

• rDS(ON) = 0.022Ω

• Temperature Compensating PSPICE Model

• Can be Driven Directly from CMOS, NMOS, and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175°C Operating Temperature