RFD14N06LSM中文资料INTERSIL数据手册PDF规格书

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.

特性 Features

• 14A, 60V

• rDS(ON)= 0.100Ω

• Temperature Compensating PSPICE® Model

• Can be Driven Directly from CMOS, NMOS, and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”