14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

Intersil

14A, 60V, 0.100 Ohm, N-Channel Power MOSFET

This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulator

文件：75.05 Kbytes 页数：8 Pages

Intersil

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

Intersil

N-Channel 60 V (D-S) MOSFET

文件：960.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件：960.45 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

文件：83.45 Kbytes 页数：8 Pages

Intersil