RFP14N06中文资料INTERSIL数据手册PDF规格书

This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching convertors, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits.

Formerly developmental type TA09770.

特性 Features

• 14A, 60V

• rDS(ON) = 0.100Ω

• Temperature Compensating PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175°C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”