RFP12N10L中文资料仙童半导体数据手册PDF规格书

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuits upply voltages.

特性 Features

• 12A, 100V

•rDS(ON) = 0.200Ω

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards