丝印：F12N10L；Package：TO-220AB；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate

文件：361.5 Kbytes 页数：6 Pages

Fairchild

仙童半导体

12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate

文件：38.42 Kbytes 页数：5 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.83 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver

文件：101.13 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel 100-V (D-S) MOSFET

文件：938.21 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate ox • 12A, 100V\n•rDS(ON)= 0.200Ω\n• Design Optimized for 5V Gate Drives\n• Can be Driven Directly from QMOS, NMOS,TTL Circuits\n• Compatible with Automotive Drive Requirements\n• SOA is Power-Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n;

Renesas

瑞萨

N 沟道，逻辑电平，功率 MOSFET，100V，12A，200mΩ

这些N沟道加强模式硅栅极功率场效应晶体管设计用于逻辑电平(5V)驱动源，适合可编程控制器、车用开关和电磁阀驱动器等应用。 这种性能通过一个特殊的栅极氧化设计来实现，在栅极偏置范围为3V到5V时提供完整的额定电导，从而可以通过逻辑电路电源电压直接实现真正的开-关电源控制。 以前的开发类型为TA09526。 •12A, 100V\n•rDS(ON)= 0.200Ω\n•针对5V栅极驱动优化的设计\n•可直接从CMOS、NMOS、TTL电路驱动\n•与车用驱动要求兼容\n•SOA为有限功耗\n•纳秒开关速度\n•线性传递特性\n•高输入阻抗\n•多数载流子器件\n•相关文献;

ONSEMI

安森美半导体

Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail

NJS