16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件：47.83 Kbytes 页数：6 Pages

Intersil

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件：609.98 Kbytes 页数：7 Pages

Fairchild

仙童半导体

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

文件：395.55 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件：158.72 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：763.3 Kbytes 页数：4 Pages

Bychip

百域芯

丝印：16N05L；Package：TO-252；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件：491.7 Kbytes 页数：6 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 30A RDS(ON)

文件：911.54 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

文件：609.98 Kbytes 页数：7 Pages

Fairchild

仙童半导体

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

文件：395.55 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.85 Kbytes 页数：2 Pages

ISC

无锡固电