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RFD16N05L

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05L

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05LSM

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFD16N05LSM

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD16N05LSM9A

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N05LSM9A

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFD16N05LSM9A

Marking:16N05L;Package:TO-252;60V N-Channel MOSFET

Features VDS(V)=60V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

详细参数

  • 型号:

    RFD16N05L

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO-252
500
只做原厂渠道 可追溯货源
询价
HAR
24+
4897
绝对原装!现货热卖!
询价
24+
N/A
2500
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHI
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
询价
HARRIS
23+
NA
8561
专做原装正品,假一罚百!
询价
FSC
11
TO-252
6000
绝对原装自己现货
询价
FAIRCHILD/仙童
23+
TO-252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
24+
TO-252
1905
原装现货假一赔十
询价
HAR
2022+
TO-252
12850
原厂代理 终端免费提供样品
询价
更多RFD16N05L供应商 更新时间2025-7-19 16:36:00