4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：38.37 Kbytes 页数：5 Pages

Intersil

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：351.77 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：38.37 Kbytes 页数：5 Pages

Intersil

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：351.77 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：780.06 Kbytes 页数：5 Pages

Bychip

百域芯

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

Renesas

瑞萨

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

ONSEMI

安森美半导体