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RFD4N06L

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD4N06L

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD4N06LSM

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD4N06LSM

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD4N06LSM9A

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFP4N06

4A,50Vand60V,0.800Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFP4N06L

4A,50Vand60V,0.800Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFP4N05LandRFP4N06LareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate

Intersil

Intersil Corporation

详细参数

  • 型号:

    RFD4N06L

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
24+
N/A
5000
公司存货
询价
INTERSIL/FSC
23+
TO-251
28610
询价
infineon
23+
原厂原装
3000
全新原装
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
HARRIS
23+
NA
1410
专做原装正品,假一罚百!
询价
FAIRCHILD/仙童
23+
TO-252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
24+
TO-252
600
原装现货假一赔十
询价
FAIRCHILD/仙童
2022+
SOT-252
12888
原厂代理 终端免费提供样品
询价
F
23+
SOT-252
6000
原装正品,支持实单
询价
FAIRCHILD/仙童
24+
NA/
3650
原厂直销,现货供应,账期支持!
询价
更多RFD4N06L供应商 更新时间2025-7-21 16:00:00