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RFD8P06

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06E

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06ESM

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06LE

8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

RFD8P06LESM

8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

RFD8P06E

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD8P06E_02

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD8P06ESM

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD8P06TM

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    RFD8P06

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO-252
5000
只做原厂渠道 可追溯货源
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
FAIRCHILD
23+
TO-252
9526
询价
HARRIS
23+
TO-251
8650
受权代理!全新原装现货特价热卖!
询价
FAI
25+23+
TO252
76030
绝对原装正品现货,全新深圳原装进口现货
询价
HARRIS
24+
TO-251
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD
08+
TO-252
5000
普通
询价
INFINEON/英飞凌
23+
TO252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022+
TO-252
5000
原厂代理 终端免费提供样品
询价
I
23+
TO-252
6000
原装正品,支持实单
询价
更多RFD8P06供应商 更新时间2025-7-13 16:36:00