RFD4N06LSM中文资料INTERSIL数据手册PDF规格书

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages.

Features

• 4A, 60V

• rDS(ON) = 0.600Ω

• Design Optimized for 5 Volt Gate Drive

• Can be Driven Directly From Q-MOS, N-MOS,

or TTL Circuits

• SOA is Power Dissipation Limited

• 175°C Rated Junction Temperature

• Logic Level Gate

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”