首页 >RFD16N06>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

RFD16N06

16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件:85.03 Kbytes 页数:7 Pages

Intersil

RFD16N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:308.8 Kbytes 页数:2 Pages

ISC

无锡固电

RFD16N06

N-Channel 60 V (D-S) MOSFET

文件:960.51 Kbytes 页数:7 Pages

VBSEMI

微碧半导体

RFD16N06

16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

RFD16N06LE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:309.74 Kbytes 页数:2 Pages

ISC

无锡固电

RFD16N06LE

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件:342.79 Kbytes 页数:7 Pages

Intersil

RFD16N06LESM

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件:342.79 Kbytes 页数:7 Pages

Intersil

RFD16N06LESM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.79 Kbytes 页数:2 Pages

ISC

无锡固电

RFD16N06LESM

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件:193.57 Kbytes 页数:7 Pages

Fairchild

仙童半导体

RFD16N06SM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:298.84 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    60

  • VGS Max (V):

    10/-8

  • VGS(th) Max (V):

    3

  • ID Max (A):

    16

  • PD Max (W):

    90

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    47

  • RDS(on) Max @ VGS = 10 V(mΩ):

    47

  • Qg Typ @ VGS = 10 V (nC):

    29

  • Ciss Typ (pF):

    1350

  • Package Type:

    DPAK-3/TO-252-3

供应商型号品牌批号封装库存备注价格
24+
N/A
5000
公司存货
询价
FSC
24+
TO-252
5000
只做原装公司现货
询价
FAIRCHILD/仙童
23+
TO-252
32054
全新原装正品现货,支持订货
询价
I
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
INTERSIL/FSC
NEW
TO-251
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
仙童
05+
TO-252
12000
原装进口
询价
HAR
25+
TO-252
4600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
询价
FAIRCHI
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
询价
HAR
23+
RFD16N06LESM
13528
振宏微原装正品,假一罚百
询价
更多RFD16N06供应商 更新时间2025-11-20 16:01:00