16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

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Intersil

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：231.25 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.07 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 6.7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：211.66 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技