11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：416.36 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：1.37302 Mbytes 页数：8 Pages

Fairchild

仙童半导体

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：86.26 Kbytes 页数：8 Pages

Intersil

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：780.09 Kbytes 页数：5 Pages

Bychip

百域芯

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：1.37302 Mbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel 60 V (D-S) MOSFET

文件：1.00467 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N 沟道，逻辑电平，功率 MOSFET，60V，11A，107mΩ

这些N沟道加强模式功率MOSFET采用最新制造工艺技术制造。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件设计用于开关稳压器、开关转换器、电机驱动和继电器驱动器等应用。 此类晶体管可以直接通过集成电路运行。 以前的开发类型为TA49158。 •11A，60V\n•rDS(ON)= 0.107Ω\n•温度补偿式PSPICE®模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•相关文献;

ONSEMI

安森美半导体