首页 >RFD3055SM>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

RFD3055SM

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件:82.17 Kbytes 页数:8 Pages

Intersil

RFD3055SM

12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)

Description The RFD3055, RFD3055SM and RFP3055 N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for

文件:118.15 Kbytes 页数:8 Pages

HARRIS

RFD3055SM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:299.14 Kbytes 页数:2 Pages

ISC

无锡固电

RFD3055SM

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

文件:418.34 Kbytes 页数:8 Pages

Fairchild

仙童半导体

RFD3055SM9A

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

文件:424.04 Kbytes 页数:8 Pages

Fairchild

仙童半导体

RFD3055SM9A

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件:780.06 Kbytes 页数:5 Pages

Bychip

百域芯

RFD3055SM

MOSFET N-CH 60V 12A DPAK

ONSEMI

安森美半导体

RFD3055SM9A

MOSFET N-CH 60V 12A DPAK

ONSEMI

安森美半导体

详细参数

  • 型号:

    RFD3055SM

  • 功能描述:

    MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
SOT252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
NK/南科功率
2025+
TO-252
2500
国产南科平替供应大量
询价
FAIRCHILD
24+
TO-252
36800
询价
仙童
05+
TO-252
12000
原装进口
询价
INT/FSC
17+
TO-252
6200
询价
FAIRCHILD
17+
SOT-252
9888
只做原装,现货库存
询价
TI
23+
DIP
80000
全新原装假一赔十
询价
FAIRCHILD
20+
TO-252(DPAK)
36900
原装优势主营型号-可开原型号增税票
询价
FAIRCHILD
1709+
TO-252/D-PAK
32500
普通
询价
FAIRCHILD/仙童
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多RFD3055SM供应商 更新时间2025-12-12 14:01:00