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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
RFD3055	文件：416.36 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD3055	文件：82.17 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
RFD3055	文件：418.34 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD3055	文件：118.15 Kbytes Page：8 Pages	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor	HARRIS Harris Corporation	HARRIS
RFD3055LE	文件：416.36 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD3055LE	文件：86.26 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil
RFD3055LE	文件：1.37302 Mbytes Page：8 Pages	N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD3055LESM	文件：416.36 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
RFD3055LESM	文件：86.26 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil
RFD3055LESM	文件：1.37302 Mbytes Page：8 Pages	N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

详细参数

型号：
RFD3055
功能描述：
MOSFET Power MOSFET N-Ch 60V/12a/0.150 Ohm
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亚泰盈科电子有限公司	RFD3055	FAIRCHILD		SOT-252	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
深圳市坤融电子科技有限公司	RFD3055	FAIRCHILD/仙童	24+	252	30000	只做原厂渠道可追溯货源	询价
深圳市创新迹电子有限公司	RFD3055	FSC	2021+	TO-252	6800	原厂原装,欢迎咨询	询价
深圳市高捷芯城科技有限公司	RFD3055	onsemi(安森美)	24+	IPAK	7845	支持大陆交货,美金交易。原装现货库存。	询价
深圳市汇莱威科技有限公司	RFD3055	ON/安森美	24+	TO-252	505348	免费送样原盒原包现货一手渠道联系	询价
深圳市一线半导体有限公司	RFD3055	FAIRCHILD	24+	TO-252	36800		询价
深圳市毅创腾电子科技有限公司	RFD3055			TO-251	1000	原装长期供货!	询价
深圳市星佑电子有限公司	RFD3055	仙童	05+	TO-251	5000	原装进口	询价
深圳市昌和盛利电子有限公司	RFD3055	FAIRCHILD	23+	TO-252	9526		询价
深圳市恒创达实业有限公司	RFD3055	HAR/FSC	17+	TO-252	6200		询价

更多RFD3055供应商更新时间2025-7-23 14:01:00

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