N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：76.45 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：486.17 Kbytes 页数：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：75.67 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：351AN；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

文件：910.89 Kbytes 页数：3 Pages

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：78.57 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON)

文件：1.69978 Mbytes 页数：5 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：78.91 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.24 Kbytes 页数：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

文件：60.76 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularl

文件：60.76 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司