Single N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：266.32 Kbytes 页数：10 Pages

FAIRCHILD

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Single N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

文件：330.01 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：332.05 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：330.63 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

文件：329.77 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

文件：330.9 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single P-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

文件：329.92 Kbytes 页数：10 Pages

FAIRCHILD

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丝印：NDS8435；Package：SOP-8；-30V P-Channel MOSFET

General Description SOP-8 P-Channel enhancement mode power field effect transistors are produced using,high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particu

文件：548.82 Kbytes 页数：7 Pages

UMW

友台半导体

Complementary MOSFET Half Bridge

General Description These Complementary MOSFET half bridge devices are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件：350.58 Kbytes 页数：12 Pages

FAIRCHILD

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Complementary MOSFET Half Bridge

General Description These Complementary MOSFET half bridge devices are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件：349.57 Kbytes 页数：12 Pages

FAIRCHILD

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