NDS9957

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

NDS9958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperforma

NDS9959

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology. Features ■2.0A,50V.RDS(ON)=0.3Ω@VGS=10V ■HighdensitycelldesignforextremelylowRDS(ON). ■Highpowerandcurre

NDS9959-NL

Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES •TrenchFET®powerMOSFET •100%RgandUIStested

NDSH10120C-F155

丝印：DSH10120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

NDSH10170A

丝印：NDSH10170A；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC,10 A, 1700 V, D1, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

NDSH20120CDN

丝印：DSH20120CDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

NDSH20120C-F155

丝印：DSH20120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

NDSH25170A

丝印：NDSH25170A；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

NDSH25170A_V01

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil