Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件：341.13 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件：341.13 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件：340.88 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

文件：360.86 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. Features ■ 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V ■ High density cell design for extremely low RDS(ON). ■ High power and curre

文件：340.08 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested

文件：238.44 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：DSH10120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：292.94 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：NDSH10170A；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC,10 A, 1700 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：304.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：DSH20120CDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：290.5 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：DSH20120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：292.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体